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1

Wafer Bonding of SiC-AlN at Room Temperature for All-SiC Capacitive Pressure Sensor

Mu, Fengwen, Xu, Yang, Shin, Seongbin, Wang, Yinghui, Xu, Hengyu, Shang, Haiping, Sun, Yechao, Yue, Lei, Tsuyuki, Tatsurou, Suga, Tadatomo, Wang, Weibing, Chen, Dapeng

Journal:

Year:

2019

Language:

english

File:

PDF, 2.08 MB

english, 2019

2

[IEEE 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2014.7.15-2014.7.16)] 2014 4th IEEE International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - SiC wafer bonding by modified suface activated bonding method

Mu, Fengwen, Suga, Tadatomo, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

Year:

2014

Language:

english

File:

PDF, 747 KB

english, 2014

3

[IEEE 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Tokyo, Japan (2017.5.16-2017.5.18)] 2017 5th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Room temperature SiC-SiC direct wafer bonding by SAB methods

Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, Suga, Tadatomo

Year:

2017

Language:

english

File:

PDF, 223 KB

english, 2017

4

[IEEE High Density Packaging (ICEPT-HDP) - Shanghai, China (2011.08.8-2011.08.11)] 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging - Large-scale synthesis of Ag nanoparticles by polyol process for low temperature bonding application

Yan, Jianfeng, Zou, Guisheng, Wang, Xiaoyu, Bai, Hailin, Mu, Fengwen, Wu, Aiping

Year:

2011

Language:

english

File:

PDF, 3.23 MB

english, 2011

5

[IEEE High Density Packaging (ICEPT-HDP) - Shanghai, China (2011.08.8-2011.08.11)] 2011 12th International Conference on Electronic Packaging Technology and High Density Packaging - A study on the low temperature sintering-bonding through in-situ formation of Ag nanoparticles using Ag2O microparticles

Mu, Fengwen, Zou, Guisheng, Yan, Jianfeng, Bai, Hailin, Wu, Aiping

Year:

2011

Language:

english

File:

PDF, 6.13 MB

english, 2011

6

GaN-Si Direct Wafer Bonding at Room Temperature for Thin GaN Device Transfer after Epitaxial Lift Off

Mu, Fengwen, Morino, Yuki, Jerchel, Kathleen, Fujino, Masahisa, Suga, Tadatomo

Journal:

Applied Surface Science

Year:

2017

Language:

english

File:

PDF, 2.71 MB

english, 2017

7

Room temperature GaN-diamond bonding for high-power GaN-on-diamond devices

Mu, Fengwen, He, Ran, Suga, Tadatomo

Journal:

Scripta Materialia

Year:

2018

Language:

english

File:

PDF, 2.29 MB

english, 2018

8

De-bondable SiC-SiC wafer bonding via an intermediate Ni nano-film

Mu, Fengwen, Uomoto, Miyuki, Shimatsu, Takehito, Wang, Yinghui, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Higurashi, Eiji, Suga, Tadatomo

Journal:

Applied Surface Science

Year:

2018

Language:

english

File:

PDF, 1.44 MB

english, 2018

9

[IEEE 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Shanghai, China (2018.8.8-2018.8.11)] 2018 19th International Conference on Electronic Packaging Technology (ICEPT) - Room temperature GaN bonding by surface activated bonding methods

Mu, Fengwen, Suga, Tadatomo

Year:

2018

Language:

english

File:

PDF, 7.53 MB

english, 2018

10

[IEEE 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Kanazawa, Japan (2019.5.21-2019.5.25)] 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Low temperature all-Cu bonding via Cu-nanoparticle paste sintering in Pt-catalyzed formic acid vapor

Mu, Fengwen, Ren, Hui, Shin, Seongbin, Masatake, Akaike, Liu, Lei, Zou, Guisheng, Makoto, Yoshida, Suga, Tadatomo

Year:

2019

Language:

english

File:

PDF, 164 KB

english, 2019

11

[IEEE 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Kanazawa, Japan (2019.5.21-2019.5.25)] 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - The integration of Ga 2 O 3 on SiC at room temperature by surface activated bonding method

Xu, Yang, Mu, Fengwen, Wang, Yinghui, Chen, Dapeng, Suga, Tadatomo

Year:

2019

Language:

english

File:

PDF, 480 KB

english, 2019

12

A reddish orange-emitting stoichiometric phosphor K3Eu(PO4)2 for white light-emitting diodes

Guifang Ju, Yihua Hu, Li Chen, Xiaojuan Wang, Zhongfei Mu, Haoyi Wu, Fengwen Kang

Journal:

Optics & Laser Technology

Year:

2012

Language:

english

File:

PDF, 411 KB

english, 2012

13

A red-emitting heavy doped phosphor Li6Y(BO3)3:Eu3+ for white light-emitting diodes

Guifang Ju, Yihua Hu, Haoyi Wu, Zhongfu Yang, Chujun Fu, Zhongfei Mu, Fengwen Kang

Journal:

Optical Materials

Year:

2011

Language:

english

File:

PDF, 494 KB

english, 2011

14

The structure and luminescence properties of a novel orange emitting phosphor Y3MnxAl5−2xSixO12

Zhongfei Mu, Yihua Hu, Haoyi Wu, Chujun Fu, Fengwen Kang

Journal:

Physica B: Condensed Matter

Year:

2011

Language:

english

File:

PDF, 445 KB

english, 2011

15

The structure and luminescence properties of long afterglow phosphor Y3−xMnxAl5−xSixO12

Zhongfei Mu, Yihua Hu, Yinhai Wang, Haoyi Wu, Chujun Fu, Fengwen Kang

Journal:

Journal of Luminescence

Year:

2011

Language:

english

File:

PDF, 472 KB

english, 2011

16

The luminescence of bismuth and europium in Ca4YO(BO3)3

Guifang Ju, Yihua Hu, Li Chen, Xiaojuan Wang, Zhongfei Mu, Haoyi Wu, Fengwen Kang

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 700 KB

english, 2012

17

Luminescence and red long afterglow investigation of Eu3+–Sm3+ CO-doped CaWO4 phosphor

Fengwen Kang, Yihua Hu, Haoyi Wu, Zhongfei Mu, Guifang Ju, Chujun Fu, Nana Li

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 1.22 MB

english, 2012

18

Luminescence properties of Y2O3:Bi3+, Ln3+ (Ln=Sm, Eu, Dy, Er, Ho) and the sensitization of Ln3+ by Bi3+

Guifang Ju, Yihua Hu, Li Chen, Xiaojuan Wang, Zhongfei Mu, Haoyi Wu, Fengwen Kang

Journal:

Journal of Luminescence

Year:

2012

Language:

english

File:

PDF, 597 KB

english, 2012

19

Observation on long afterglow of Tb3+ in CaWO4

Haoyi Wu, Yihua Hu, Fengwen Kang, Li Chen, Xiaojuan Wang, Guifang Ju, Zhongfei Mu

Journal:

Materials Research Bulletin

Year:

2011

Language:

english

File:

PDF, 456 KB

english, 2011

20

Luminescence investigation of Eu3+-Bi3+ co-doped CaMoO4 phosphor

Fengwen KANG, Yihua HU, Haoyi WU, Guifang JU, Zhongfei MU, Nana LI

Journal:

Journal of Rare Earths

Year:

2011

Language:

english

File:

PDF, 911 KB

english, 2011

21

Luminescent Properties of Praseodymium in CaWO4 Matrix

Haoyi Wu, Yihua Hu, Fengwen Kang, Nana Li, Guifang Ju, Zhongfei Mu, Zhongfu Yang

Journal:

Journal of the American Ceramic Society

Year:

2012

Language:

english

File:

PDF, 893 KB

english, 2012

22

Luminescent properties of Na3Gd1−xEux(PO4)2 and energy transfer in these phosphors

Guifang Ju, Yihua Hu, Li Chen, Xiaojuan Wang, Zhongfei Mu, Haoyi Wu, Fengwen Kang

Journal:

Journal of Alloys and Compounds

Year:

2011

Language:

english

File:

PDF, 483 KB

english, 2011

23

Luminescence and energy transfer of Mn2+ and Tb3+ in Y3Al5O12 phosphors

Zhongfei Mu, Yihua Hu, Haoyi Wu, Chujun Fu, Fengwen Kang

Journal:

Journal of Alloys and Compounds

Year:

2011

Language:

english

File:

PDF, 444 KB

english, 2011

24

Enhancement of red fluorescence and afterglow in CaWO4:Eu3+ by addition of MoO3

Kang, Fengwen, Hu, Yihua, Wu, Haoyi, Ju, Guifang, Mu, Zhongfei, Li, Nana

Journal:

Year:

2013

Language:

english

File:

PDF, 1.49 MB

english, 2013

25

White-Light Generation and Energy Transfer in Y2O3:Bi,Eu Phosphor for Ultraviolet Light-Emitting Diodes

Ju, Guifang, Hu, Yihua, Chen, Li, Wang, Xiaojuan, Mu, Zhongfei, Wu, Haoyi, Kang, Fengwen

Journal:

Journal of The Electrochemical Society

Year:

2011

Language:

english

File:

PDF, 1.55 MB

english, 2011

26

[IEEE 2014 International Conference on Electronics Packaging (ICEP) - Toyama, Japan (2014.4.23-2014.4.25)] 2014 International Conference on Electronics Packaging (ICEP) - Direct bonding of SiC by the suface activated bonding method

Suga, Tadatomo, Fengwen Mu,, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

Year:

2014

Language:

english

File:

PDF, 2.10 MB

english, 2014

27

Silicon carbide wafer bonding by modified surface activated bonding method

Suga, Tadatomo, Mu, Fengwen, Fujino, Masahisa, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

Journal:

Japanese Journal of Applied Physics

Year:

2015

Language:

english

File:

PDF, 1.31 MB

english, 2015

28

[IEEE 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC) - Kyoto, Japan (2015.4.14-2015.4.17)] 2015 International Conference on Electronic Packaging and iMAPS All Asia Conference (ICEP-IAAC) - Wafer bonding of SiC-SiC and SiC-Si by modified suface activated bonding method

Mu, Fengwen, Fujino, Masahisa, Suga, Tadatomo, Takahashi, Yoshikazu, Nakazawa, Haruo, Iguchi, Kenichi

Year:

2015

Language:

english

File:

PDF, 2.14 MB

english, 2015

29

A comparison study: Direct wafer bonding of SiC–SiC by standard surface-activated bonding and modified surface-activated bonding with Si-containing Ar ion beam

Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, He, Ran, Suga, Tadatomo

Journal:

Applied Physics Express

Year:

2016

Language:

english

File:

PDF, 917 KB

english, 2016

30

Room-temperature wafer bonding of SiC–Si by modified surface activated bonding with sputtered Si nanolayer

Mu, Fengwen, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu, Fujino, Masahisa, Suga, Tadatomo

Journal:

Japanese Journal of Applied Physics

Year:

2016

Language:

english

File:

PDF, 1.36 MB

english, 2016

31

Mechanism of Low Temperature Sintering-Bonding through In-Situ Formation of Silver Nanoparticles Using Silver Oxide Microparticles

Mu, Fengwen, Zhao, Zhenyu, Zou, Guisheng, Bai, Hailin, Wu, Aiping, Liu, Lei, Zhang, Dongyue, Norman Zhou, Y.

Journal:

MATERIALS TRANSACTIONS

Year:

2013

Language:

english

File:

PDF, 3.52 MB

english, 2013

32

Single crystalline 3C-SiC anodically bonded onto glass: an excellent platform for high temperature electronics and bio applications

Phan, Hoang-Phuong, Cheng, Han-Hao, Dinh, Toan Khac, Wood, Barry, Nguyen, Tuan-Khoa, Mu, Fengwen, Kamble, Harshad, Vadivelu, Raja, Walker, Glenn, Hold, Leonie, Iacopi, Alan, Haylock, Ben, Dao, Dzung V

Journal:

ACS Applied Materials & Interfaces

Year:

2017

Language:

english

File:

PDF, 1.77 MB

english, 2017

33

[IEEE 2017 18th International Conference on Electronic Packaging Technology (ICEPT) - Harbin, China (2017.8.16-2017.8.19)] 2017 18th International Conference on Electronic Packaging Technology (ICEPT) - SiC wafer bonding using surface activation method for power device

Mu, Fengwen, Fujino, Masahisa, Suga, Tadatomo, Iguchi, Kenichi, Nakazawa, Haruo, Takahashi, Yoshikazu

Year:

2017

Language:

english

File:

PDF, 4.52 MB

english, 2017

34

Application of atomic simulation methods on the study of graphene nanostructure fabrication by particle beam irradiation: A review

Wu, Xin, Mu, Fengwen, Wang, Yinghui, Zhao, Haiyan

Journal:

Computational Materials Science

Year:

2018

Language:

english

File:

PDF, 2.08 MB

english, 2018

35

Graphene and Graphene-Based Nanomaterials for DNA Detection: A Review

Wu, Xin, Mu, Fengwen, Wang, Yinghui, Zhao, Haiyan

Journal:

Year:

2018

File:

PDF, 2.73 MB

2018

36

Graphene and Graphene-Based Nanomaterials for DNA Detection: A Review

Wu, Xin, Mu, Fengwen, Wang, Yinghui, Zhao, Haiyan

Journal:

Year:

2018

Language:

english

File:

PDF, 2.73 MB

english, 2018

37

Direct wafer bonding of GaN-SiC for high power GaN-on-SiC devices

Mu, Fengwen, Wang, Yinghui, He, Ran, Suga, Tadatomo

Journal:

Year:

2018

Language:

english

File:

PDF, 1.02 MB

english, 2018

38

(Invited) Room Temperature Wafer Bonding of Wide Bandgap Semiconductors

Mu, Fengwen, Wang, Yinghui, Suga, Tadatomo

Journal:

ECS Transactions

Year:

2018

Language:

english

File:

PDF, 5.26 MB

english, 2018

39

Strain Effect in Highly-Doped n-Type 3C-SiC-on-Glass Substrate for Mechanical Sensors and Mobility Enhancement

Phan, Hoang-Phuong, Nguyen, Tuan-Khoa, Dinh, Toan, Cheng, Han-Hao, Mu, Fengwen, Iacopi, Alan, Hold, Leonie, Dao, Dzung Viet, Suga, Tadatomo, Senesky, Debbie G., Nguyen, Nam-Trung

Journal:

physica status solidi (a)

Year:

2018

Language:

english

File:

PDF, 664 KB

english, 2018

40

Direct wafer bonding of Ga2O3–SiC at room temperature

Xu, Yang, Mu, Fengwen, Wang, Yinghui, Chen, Dapeng, Ou, Xin, Suga, Tadatomo

Journal:

Ceramics International

Year:

2018

Language:

english

File:

PDF, 1.57 MB

english, 2018

41

[IEEE 2018 7th Electronic System-Integration Technology Conference (ESTC) - Dresden, Germany (2018.9.18-2018.9.21)] 2018 7th Electronic System-Integration Technology Conference (ESTC) - Surface Activated Bonding Method for Low Temperature Bonding

Suga, Tadatomo, Mu, Fengwen

Year:

2018

Language:

english

File:

PDF, 2.08 MB

english, 2018

42

Low temperature Cu bonding with large tolerance of surface oxidation

Ren, Hui, Mu, Fengwen, Shin, Seongbin, Liu, Lei, Zou, Guisheng, Suga, Tadatomo

Journal:

Year:

2019

Language:

english

File:

PDF, 2.36 MB

english, 2019

43

Recent progress in the synthesis of graphene/CNT composites and the energy-related applications

Wu, Xin, Mu, Fengwen, Zhao, Haiyan

Journal:

Journal of Materials Science & Technology

Year:

2019

Language:

english

File:

PDF, 6.14 MB

english, 2019

44

High Thermal Boundary Conductance across Heterogeneous GaN-SiC Bonded Interfaces

Mu, Fengwen, Cheng, Zhe, Shi, Jingjing, Shin, Seongbin, Xu, Bin, Shiomi, Junichiro, Graham, Samuel, Suga, Tadatomo

Journal:

ACS Applied Materials & Interfaces

Year:

2019

Language:

english

File:

PDF, 1.60 MB

english, 2019

45

[IEEE 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Las Vegas, NV, USA (2019.5.28-2019.5.31)] 2019 IEEE 69th Electronic Components and Technology Conference (ECTC) - Temporary SiC-SiC Wafer Bonding Compatible with High Temperature Annealing

Mu, Fengwen, Suga, Tadatomo, Uomoto, Miyuki, Shimatsu, Takehito

Year:

2019

Language:

english

File:

PDF, 2.13 MB

english, 2019

46

[IEEE 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - Kanazawa, Japan (2019.5.21-2019.5.25)] 2019 6th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D) - SiC-SiC temporary bonding compatible with rapid thermal annealing at 1000 °C

Mu, Fengwen, Suga, Tadatomo, Uomoto, Miyuki, Shimatsu, Takehito, Iguchi, Kenichi, Nakazawa, Haruo

Year:

2019

Language:

english

File:

PDF, 217 KB

english, 2019

47

Interfacial Thermal Conductance across Room-Temperature Bonded GaN-Diamond Interfaces for GaN-on-Diamond Devices

Cheng, Zhe, Mu, Fengwen, Yates, Luke, Suga, Tadatomo, Graham, Samuel

Journal:

ACS Applied Materials & Interfaces

Year:

2020

Language:

english

File:

PDF, 895 KB

english, 2020

48

[IEEE 2019 IEEE International Electron Devices Meeting (IEDM) - San Francisco, CA, USA (2019.12.7-2019.12.11)] 2019 IEEE International Electron Devices Meeting (IEDM) - First Demonstration of Waferscale Heterogeneous Integration of Ga 2 O 3 MOSFETs on SiC and Si Substrates by Ion-Cutting Process

Xu, Wenhui, Zhang, Yuhao, Hao, Yue, Wang, Xi, Wang, Yibo, You, Tiangui, Ou, Xin, Han, Genquan, Hu, Haodong, Zhang, Shibin, Mu, Fengwen, Suga, Tadatomo

Year:

2019

File:

PDF, 1.21 MB

2019

49

Robust Ag-Cu Sintering Bonding at 160 Â°C via Combining Ag2O Microparticle Paste and Pt-Catalyzed Formic Acid Vapor

He, Liangliang, Li, Junlong, Wu, Xin, Mu, Fengwen, Wang, Yinghui, Lu, Yangting, Suga, Tadatomo

Journal:

Year:

2020

File:

PDF, 3.11 MB

2020

50

Î²-Ga2O3 MOSFETs on the Si substrate fabricated by the ion-cutting process

Wang, YiBo, Xu, WenHui, You, TianGui, Mu, FengWen, Hu, HaoDong, Liu, Yan, Huang, Hao, Suga, Tadatomo, Han, GenQuan, Ou, Xin, Hao, Yue

Journal:

SCIENCE CHINA Physics, Mechanics & Astronomy

Year:

2020

File:

PDF, 859 KB

2020

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